Range parameters of boron implanted into silicon
- 1 January 1981
- journal article
- solids and-surfaces
- Published by Springer Nature in Applied Physics B Laser and Optics
- Vol. 24 (1) , 39-43
- https://doi.org/10.1007/bf00900395
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Simulation of doping processesIEEE Transactions on Electron Devices, 1980
- The application of the (n, α) method for boron depth profiling and channeling-blocking measurements in semiconductor materialsNuclear Instruments and Methods, 1980
- Determination of low dose concentration profiles in solids by means of (n, p) and (n, α) reactionsJournal of Radioanalytical and Nuclear Chemistry, 1977
- The determination of low dose boron implanted concentration profiles in silicon by the (n,α) reactionNuclear Instruments and Methods, 1975
- Estimation of impurity profiles in ion-implanted amorphous targets using joined half-Gaussian distributionsApplied Physics Letters, 1973
- Distribution of Boron Implanted SiliconPublished by Springer Nature ,1971
- Non-Gaussian Implantation ProfilesPublished by Springer Nature ,1971
- ANOMALOUS PENETRATION OF XENON IN TUNGSTEN CRYSTALS—A DIFFUSION EFFECTCanadian Journal of Physics, 1966