Hydrogen sulfide plasma passivation of gallium arsenide
- 10 February 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (6) , 716-717
- https://doi.org/10.1063/1.106547
Abstract
Improvement in the electrical properties of the GaAs surface has been accomplished using a room-temperature hydrogen sulfide plasma. The surface has then been protected by a 300 °C plasma enhanced chemical vapor deposition (PECVD) SiO2 film. This treatment is highly reproducible due to computer control of process parameters and long-lasting due to the SiO2 cap. Improved C-V characteristics were observed, showing interface trap densities in the high 1011 cm−2 eV−1 range. Photoluminescence (PL) measurements on the sulfided samples showed increased intensity over the untreated samples.Keywords
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