Detection of Partial Dislocations in Silicon with the Scanning Electron Beam Technique
- 1 February 1966
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 37 (2) , 918-919
- https://doi.org/10.1063/1.1708284
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Observations of Individual Dislocations and Oxygen Precipitates in Silicon with a Scanning Electron Beam MethodJournal of Applied Physics, 1965
- Simultaneous Observation of Diffusion-Induced Dislocation Slip Patterns in Si With Electron Beam Scanning and Optical MeansJournal of Applied Physics, 1964
- MICROSCOPY OF INTERNAL CRYSTAL IMPERFECTIONS IN Si p-n JUNCTION DIODES BY USE OF ELECTRON BEAMSApplied Physics Letters, 1963
- Structure and Origin of Stacking Faults in Epitaxial SiliconJournal of Applied Physics, 1963
- Electron Microscopy of Prismatic Dislocations in SiliconJournal of Applied Physics, 1962
- Slip Patterns on Boron-Doped Silicon SurfacesJournal of Applied Physics, 1961
- Gold-Induced Climb of Dislocations in SiliconJournal of Applied Physics, 1960