Magnetic field-induced semimetal-to-semiconductor transition in InAs-GaSb superlattices
- 1 March 1980
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 36 (5) , 369-371
- https://doi.org/10.1063/1.91490
Abstract
With the application of a magnetic field, we have observed a semimetal-to-semiconductor transition in InAs-GaSb superlattices with closely overlapped subbands of electrons and holes. The transition is manifested in a sharp increase in the magnetoresistance in the quantum limit, where the ground Landau levels associated with the subbands are crossed at the Fermi level, resulting in carrier depletion.Keywords
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