A comparison of MBE and MOMBE/CBE growth mechanisms using modulated beam mass spectrometry and RHEED
- 1 May 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 111 (1-4) , 539-543
- https://doi.org/10.1016/0022-0248(91)91035-9
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Surface studies of the thermal decomposition of triethylgallium on GaAs (100)Journal of Crystal Growth, 1990
- Modulated molecular beam and RHEED studies of MBE and MOMBE growthJournal of Crystal Growth, 1990
- Modulated-beam mass spectrometry studies of the MOMBE growth of (100) GaAs and In0.1Ga0.9AsJournal of Crystal Growth, 1990
- Analysis of time-of-flight spectraJournal of Vacuum Science & Technology A, 1990
- Pyrolysis of trimethylgallium on GaAs(100) surfacesApplied Physics Letters, 1990
- From chemical vapor epitaxy to chemical beam epitaxyJournal of Crystal Growth, 1989
- RHEED Intensity Observation during TEGa-As4 Alternate Supply Growth of GaAsJapanese Journal of Applied Physics, 1988
- Kinetic and thermodynamic aspects of metal organic MBESurface Science, 1986
- Molecular beam epitaxyReports on Progress in Physics, 1985
- Evaluation of surface kinetic data by the transform analysis of modulated molecular beam measurementsSurface Science, 1974