Density of states in amorphous semiconductors determined from transient photoconductivity experiment: Computer simulation and experiment
- 1 May 1996
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 198-200, 363-366
- https://doi.org/10.1016/0022-3093(95)00725-3
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Determinaton of Localized-State Distributions from Transient Photoconductivity DataSolid State Phenomena, 1995
- Simple analysis of transient photoconductivity for determination of localized-state distributions in amorphous semiconductors using Laplace transformJournal of Applied Physics, 1995
- Relations between transient charge transport and the glass-transition temperature in amorphous chalcogenidesPhysical Review B, 1994
- Determination of localized-state distributions in amorphous semiconductors from transient photoconductivityApplied Physics Letters, 1994
- Composition dependence of photoinduced and thermally induced bleachings of amorphous Ge-S and Ge-S-Ag filmsJournal of Applied Physics, 1993
- Determination of gap-state distributions in amorphous semiconductors from transient photocurrents using a fourier transform techniqueSolid State Communications, 1992
- Photobleaching and thermal-bleaching effects in amorphous Ge-S filmsJournal of Non-Crystalline Solids, 1987
- Photocurrent Transient Spectroscopy: Measurement of the Density of Localized States in -Physical Review Letters, 1981
- Multiple-trapping model of anomalous transit-time dispersion inPhysical Review B, 1977