Coherent Anti-Stokes Raman Spectroscopic Study of CO2 Laser CVD of Silane
- 1 November 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (11A) , L712
- https://doi.org/10.1143/jjap.22.l712
Abstract
Coherent anti-Stokes Raman spectroscopy (CARS) has been used to study gas phase processes involved in CO2 laser chemical vapor deposition of silane. SiH4 CARS spectrum exhibited a unique profile which was interpreted as arising from excitation of rotational levels following gas phase reactions. From N2 CARS thermometry, the CO2 laser beam was found to raise the temperature of the gas containing silane. Using the observed CARS results, we discuss why silicon films are deposited faster when the CO2 laser is tuned to absorption lines of silane.Keywords
This publication has 10 references indexed in Scilit:
- Laser-induced deposition of silicon filmsThin Solid Films, 1983
- Hydrogenated amorphous silicon produced by laser induced chemical vapor deposition of silaneApplied Physics Letters, 1983
- Detection of Neutral Species in Silane Plasma Using Coherent Anti-Stokes Raman SpectroscopyJapanese Journal of Applied Physics, 1983
- Hydrogenated amorphous silicon growth by CO2 laser photodissociation of silaneJournal of Applied Physics, 1982
- Hydrogen elimination during the glow-discharge deposition of a-Si:H alloysApplied Physics Letters, 1981
- Broadband single-pulse CARS spectra in a fired internal combustion engineApplied Optics, 1981
- Laser-induced chemical vapor deposition of polycrystalline Si from SiCl4Applied Physics Letters, 1980
- Chemical vapor deposition of silicon using a CO2 laserApplied Physics Letters, 1978
- Energy Distribution Among Reaction Products. V. H + X2 (X ≡ Cl, Br), D + Cl2The Journal of Chemical Physics, 1972
- The Analysis of the Raman Spectra of Si2Cl6(l) and of Si2H6(g)The Journal of Chemical Physics, 1937