Narrow band gap base heterojunction bipolar transistors using SiGe alloys
- 1 January 1990
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 184 (1-2) , 153-162
- https://doi.org/10.1016/0040-6090(90)90409-7
Abstract
No abstract availableThis publication has 38 references indexed in Scilit:
- Resonant tunneling through a Si/GexSi1−x/Si heterostructure on a GeSi buffer layerApplied Physics Letters, 1988
- Resonant tunneling in Si/Si1−xGex double-barrier structuresApplied Physics Letters, 1988
- Strained layer superlatticesSuperlattices and Microstructures, 1987
- Enhancement- and depletion-mode p-channel GexSi1-xmodulation-doped FET'sIEEE Electron Device Letters, 1986
- The n-channel SiGe/Si modulation-doped field-effect transistorIEEE Transactions on Electron Devices, 1986
- Band alignments of coherently strained GexSi1−x/Si heterostructures on 〈001〉 GeySi1−y substratesApplied Physics Letters, 1986
- Measurement of the band gap of GexSi1−x/Si strained-layer heterostructuresApplied Physics Letters, 1985
- Indirect band gap of coherently strained bulk alloys on 〈001〉 silicon substratesPhysical Review B, 1985
- GexSi1−x/Si strained-layer superlattice grown by molecular beam epitaxyJournal of Vacuum Science & Technology A, 1984
- Intrinsic Optical Absorption in Germanium-Silicon AlloysPhysical Review B, 1958