Characterization of optically active defects created by noble gas ion bombardment of silicon
- 15 April 1998
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 83 (8) , 4075-4080
- https://doi.org/10.1063/1.367227
Abstract
No abstract availableThis publication has 24 references indexed in Scilit:
- Photoluminescence Measurement of Carbon in Silicon Crystals Irradiated with High Energy ElectronsJournal of the Electrochemical Society, 1994
- Measurement of defect profiles in reactive ion etched siliconJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Defect generation during plasma treatment of semiconductorsPhysica B: Condensed Matter, 1991
- Implantation and diffusion of noble gas atoms during ion-beam etching of siliconJournal of Applied Physics, 1990
- Photoluminescence study of radiative channels in ion-implanted siliconPhysical Review B, 1990
- Interstitial defect reactions in siliconApplied Physics Letters, 1987
- New method to determine the carbon concentration in siliconApplied Physics Letters, 1986
- Photoluminescence detection of impurities introduced in silicon by dry etching processesApplied Physics A, 1986
- Photoluminescence of low-energy ion bombarded siliconApplied Physics Letters, 1985
- New Class of Related Optical Defects in Silicon Implanted with the Noble Gases He, Ne, Ar, Kr, and XePhysical Review Letters, 1984