Selective-area epitaxy and etching by chemical beam epitaxy
- 2 June 1993
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 8 (6) , 1016-1022
- https://doi.org/10.1088/0268-1242/8/6/008
Abstract
This paper reviews the unique characteristics of selective-area epitaxy by chemical beam epitaxy (CBE) using either shadow masks for dielectric masks. The beam nature permits the use of shadow masks. The high-vacuum environment results in no residual deposits on the dielectric masks. By injecting a gaseous etching beam, e.g. PCl3, directly into the CBE growth chamber, selective reactive chemical beam etching of InP was also demonstrated. This permits instant switching from etching to growth (and vice versa) in the same run for the first time in CBE, etching at high substrate temperatures, and improved morphology.Keywords
This publication has 18 references indexed in Scilit:
- Advances in MOVPE, MBE, and CBEJournal of Crystal Growth, 1992
- Selective area epitaxy and growth over patterned substrates by chemical beam epitaxyElectronics Letters, 1991
- Progress in chemical beam epitaxyJournal of Crystal Growth, 1990
- Selective area growth of InP/InGaAs multiple quantum well laser structures by metalorganic molecular beam epitaxyApplied Physics Letters, 1988
- Selective growth of GaAs in the MOMBE and MOCVD systemsJournal of Crystal Growth, 1986
- Selective area growth of GaAs and In0.53Ga0.47As epilayer structures by chemical beam epitaxy using silicon shadow masks: A demonstration of the beam natureApplied Physics Letters, 1985
- Lateral-current confinement in a GaAs planar stripe-geometry and channeled substrate buried DH laser using reverse-biased p-n junctionsJournal of Applied Physics, 1978
- Molecular beam epitaxial writing of patterned GaAs epilayer structuresApplied Physics Letters, 1978
- Growth of GaAs-Ga1−xAlxAs over preferentially etched channels by molecular beam epitaxy: A technique for two-dimensional thin-film definitionApplied Physics Letters, 1977
- Growth characteristics of GaAs-Ga1−xAlxAs structures fabricated by liquid-phase epitaxy over preferentially etched channelsApplied Physics Letters, 1976