Diffusion von Bor in Silizium aus dotierten Oxiden
- 16 July 1972
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 12 (1) , 231-238
- https://doi.org/10.1002/pssa.2210120125
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
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- Further Verification of a Model for Diffusion from Doped OxidesJournal of the Electrochemical Society, 1970
- Measurement of P-Etch Rates for Boron-Doped Glass FilmsJournal of the Electrochemical Society, 1970
- Doped Oxides as Diffusion SourcesJournal of the Electrochemical Society, 1969
- Control of Boron Diffusion from a Pyrolitic Borosilicate Glass SourceJournal of the Electrochemical Society, 1969
- Diffusion from a Plane, Finite Source into a Second Phase with Special Reference to Oxide-Film Diffusion Sources on SiliconJournal of the Electrochemical Society, 1968
- Diffusion of Boron in Silicon through Oxide LayerJapanese Journal of Applied Physics, 1962
- Resistivity of Bulk Silicon and of Diffused Layers in SiliconBell System Technical Journal, 1962
- Evaluation of the Surface Concentration of Diffused Layers in SiliconBell System Technical Journal, 1958