Low-Temperature Silicon Epitaxial Growth by CO2 Laser CVD Using SiH4 Gas
- 1 April 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (4R) , 524-527
- https://doi.org/10.1143/jjap.25.524
Abstract
Silicon epitaxial growth at a low substrate temperature by CO2 laser chemical vapor deposition using SiH4 has been investigated. Single-crystalline Si was grown at a deposition rate of 15 A/s at 650°C under an SiH4 pressure of 0.05 Torr and a CO2 laser power of 6 W/cm2 on an Si substrate. The crystalline quality of deposited Si films was examined by reflection high-energy electron diffraction, and it was found that the deposition rate depends on the incident angle and the polarization of the CO2 laser beam. This is the first report on low-temperature Si epitaxial growth by CO2 laser CVD.Keywords
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