Si-Doped InGaN Films Grown on GaN Films
- 1 January 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (1A) , L16
- https://doi.org/10.1143/jjap.32.l16
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- High-Quality InGaN Films Grown on GaN FilmsJapanese Journal of Applied Physics, 1992
- Wide-gap semiconductor InGaN and InGaAln grown by MOVPEJournal of Electronic Materials, 1992
- Growth of Si-doped AlxGa1–xN on (0001) sapphire substrate by metalorganic vapor phase epitaxyJournal of Crystal Growth, 1991
- High-Power GaN P-N Junction Blue-Light-Emitting DiodesJapanese Journal of Applied Physics, 1991
- Highly P-Typed Mg-Doped GaN Films Grown with GaN Buffer LayersJapanese Journal of Applied Physics, 1991
- In Situ Monitoring of GaN Growth Using Interference EffectsJapanese Journal of Applied Physics, 1991
- Novel metalorganic chemical vapor deposition system for GaN growthApplied Physics Letters, 1991
- P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)Japanese Journal of Applied Physics, 1989
- Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPEJournal of Crystal Growth, 1989
- Properties of Ga1-xInxN Films Prepared by MOVPEJapanese Journal of Applied Physics, 1989