Characterizing hot-carrier transport in silicon heterostructures with the use of ballistic-electron-emission microscopy
- 15 August 1993
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 48 (8) , 5712-5715
- https://doi.org/10.1103/physrevb.48.5712
Abstract
High-energy (0.1–1 eV) measurements of ballistic carrier transport in semiconductors have been performed using a new ballistic-electron-emission microscopy (BEEM) technique. Hot-electron attenuation lengths for p-type Si have been determined by combining precise Si molecular-beam-epitaxy methods with BEEM. A striking anomaly has been observed in the comparison of the 293- and 77-K results.Keywords
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