A neutron backscattering study of lattice deformations in silicon due to SiO2 precipitation
- 1 January 1990
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 67 (1) , 533-539
- https://doi.org/10.1063/1.345239
Abstract
Czochralski‐grown dislocation free silicon crystals containing approximately 7.5, 9.9, and 18×1017 cm−3 oxygen atoms have been annealed at 750, 1050, and 1200 °C for times varying between 20 and 216 h. Neutron transmission spectra measured at reflection 111 in backscattering geometry reveal mean lattice contractions of the order of 5×10−5 and lattice parameter fluctuations up to Δd/d≊5×10−4. The measuring time for one spectrum is 15 min and an on‐line characterization of the defects produced during annealing is feasible. A combination of this technique with neutron small angle scattering, γ‐ray diffractometry, and diffraction experiments with high‐energy synchrotron radiation opens new possibilities for investigations of oxygen precipitation in silicon crystals as used in very‐large‐scale integration semiconductor device technology.This publication has 11 references indexed in Scilit:
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