Enhanced degradation and deep-level formation at dislocations in GaAs0.6P0.4 LED’s
- 15 March 1977
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 30 (6) , 296-297
- https://doi.org/10.1063/1.89374
Abstract
Spatially resolved measurements of the red (1.9 eV) and infrared (1.27 eV) luminescence, resulting from near‐edge and deep‐level recombinations, respectively, are presented. The samples are excited by current injection at 300 K and measured before and after a period of stressed operation. An enhanced degradation is observed at distinct lines running parallel to 〈110〉 directions which is combined just there with an increasing density of the deep‐level recombination centers.Keywords
This publication has 13 references indexed in Scilit:
- Enhanced localized degradation and anomalous emission spectra of Ga1−xAlxAs double heterostructure lasers induced by fabrication processesApplied Physics Letters, 1976
- On Dislocations in GaAs1−xPxIBM Journal of Research and Development, 1975
- Cathodoluminescence of compositionally graded layers of GaAs1−xPxJournal of Applied Physics, 1975
- The interpretation of dislocation contrast in x-ray topographs of GaAs1−x PxJournal of Applied Physics, 1974
- Defect structure introduced during operation of heterojunction GaAs lasersApplied Physics Letters, 1973
- On the infrared luminescence of GaAs1-xPxPhysica Status Solidi (a), 1973
- Effect of Donor Concentration on Several Properties of Gallium Arsenide PhosphideJapanese Journal of Applied Physics, 1972
- Stoichiometric effects in the growth of doped epitaxial layers of GaAs1-χPχJournal of Crystal Growth, 1971
- Optical observation of mismatch dislocations in GaAs luminescent diodesSolid State Communications, 1969
- Dislocations and Precipitates in GaAs Injection LasersJournal of Applied Physics, 1966