Valley current density activation energy and effective longitudinal optical phonon energy in triple well asymmetric resonant tunneling diode
- 6 August 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (6) , 575-577
- https://doi.org/10.1063/1.103625
Abstract
In this letter we report the Arrhenius-type dependence of the valley current density on inverse temperature in a triple-well asymmetric resonant tunneling diode. The activation energy is found to be equal to the effective phonon energy representing the AlAs and GaAs-like mode of AlAs in the AlxGa1−xAs barrier layers of a triple well asymmetric resonant tunneling (RT) diode operating at temperatures as high as 350 K. The data presented here correlate the longitudinal optical phonons to the excess valley current found in AlxGa1−xAs/GaAs RT devices between 200 and 350 K and raise the possibility of phonon spectroscopy of high quality barrier layers via resonant tunneling transport experiments.Keywords
This publication has 13 references indexed in Scilit:
- Resonant and non-resonant processes in double barrier structuresSuperlattices and Microstructures, 1989
- Pseudomorphic In0.53Ga0.47As/AlAs/InAs resonant tunneling diodes with peak-to-valley current ratios of 30 at room temperatureApplied Physics Letters, 1988
- Inelastic tunneling in AlAs-GaAs-AlAs heterostructuresApplied Physics Letters, 1988
- Evidence for LO-phonon-emission-assisted tunneling in double-barrier heterostructuresPhysical Review B, 1987
- Equivalence between resonant tunneling and sequential tunneling in double-barrier diodesApplied Physics Letters, 1987
- Dependence of resonant tunneling current on well widths in AlAs/GaAs/AlAs double barrier diode structuresApplied Physics Letters, 1986
- Resonant tunneling oscillations in a GaAs-AlxGa1−xAs heterostructure at room temperatureApplied Physics Letters, 1985
- Physics of resonant tunneling. The one-dimensional double-barrier casePhysical Review B, 1984
- Resonant tunneling through quantum wells at frequencies up to 2.5 THzApplied Physics Letters, 1983
- Resonant tunneling in semiconductor double barriersApplied Physics Letters, 1974