A Full Automatic On-Wafer High Frequency Measurement Station in Industrial Environment for Silicon Devices
- 1 May 1995
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableThis publication has 18 references indexed in Scilit:
- A fast measurement technique for the determination of small signal parameters of the bipolar transistorPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- On-wafer high-frequency measurement improvementsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Extracting small-signal model parameters of silicon MOSFET transistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A new parameter extraction technique for small-signal equivalent circuit of polysilicon emitter bipolar transistorsIEEE Transactions on Electron Devices, 1994
- Si bipolar chip set for 10-Gb/s optical receiverIEEE Journal of Solid-State Circuits, 1992
- On-wafer high-frequency device characterizationMicroelectronic Engineering, 1992
- A general approach to network analyzer calibrationIEEE Transactions on Microwave Theory and Techniques, 1992
- High-frequency performance of submicrometer channel-length silicon MOSFETsIEEE Electron Device Letters, 1991
- A three-step method for the de-embedding of high-frequency S-parameter measurementsIEEE Transactions on Electron Devices, 1991
- LRM and LRRM Calibrations with Automatic Determination of Load InductancePublished by Institute of Electrical and Electronics Engineers (IEEE) ,1990