An investigation into the effect of modified firing profiles on the piezoelectric properties of thick-film PZT layers on silicon

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Abstract
Screen-printed lead zirconate titanate (PZT) layers offer possibilities both for sensing and for actuation applications. The reaction between PZT and silicon during the high temperature sintering phase is a problem when combining PZT layers with silicon microelectromechanical systems. In this study we investigate a range of longer, lower temperature firing profiles for thick-film PZT, to reduce this reaction. Methods of measuring the d 33 piezoelectric coefficient of thick-film PZT layers are reviewed and the test rig used to compare samples is described. Temperatures below 800 °C are found to be insufficient to produce sintering. At other low temperatures, longer firing times are found to be necessary in order to produce consistent results. A temperature of 800 °C for 8 h was found to produce a reduction in the level of reaction, without a serious reduction of the piezoelectric activity.