A technology oriented model for transient diffusion and activation of boron in silicon
- 15 September 1995
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 78 (6) , 3671-3679
- https://doi.org/10.1063/1.360748
Abstract
We propose a model for point-defect-assisted transient diffusion and activation of high-dose boron implants in silicon. To model transient diffusion, a nonlinear equilibrium clustering model for point defects is used. The activation of boron is modeled as a Fermi-level-dependent transformation of inactive dopant clusters to substitutional atoms. Comparison with experimental data shows that this approach can provide a description of both rapid thermal annealing and long-time furnace annealing steps, with an excellent predictive capability for both chemical and electrically active profiles.This publication has 23 references indexed in Scilit:
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