Simulation of transient boron diffusion during rapid thermal annealing in silicon
- 15 June 1991
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 69 (12) , 8133-8138
- https://doi.org/10.1063/1.347466
Abstract
The transient diffusion behavior of boron during rapid thermal annealing is simulated by adapting a recently developed pair diffusion model. Boron is assumed to reside on interstitial sites after ion implantation, forming boron-interstitial pairs (BI). Decay into substitutional boron (B) and interstitials (I) starts, as the temperature rises, due to the reaction BI⇄B+I. Implantation damage has been taken into account. The model accounts for the temperature dependence of the transient diffusion effect. To reduce the problems in determining the parameters of the diffusion model and to account for equilibrium diffusion an equation is derived. This equation can be used to reduce the number of unknown parameters and to assure diffusion under equilibrium conditions to be consistent with literature values at the same time. The effectiveness is demonstrated for the simulation of the transient diffusion of boron during rapid thermal annealing.This publication has 20 references indexed in Scilit:
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