Study of interdiffusion in a Te-doped AlAs-GaAs superlattice
- 1 March 1989
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 65 (5) , 2165-2167
- https://doi.org/10.1063/1.342848
Abstract
The enhanced layer interdiffusion in Te-doped AlAs/GaAs superlattices has been studied by secondary ion mass spectrometry. The superlattice sample was grown by organometallic chemical vapor deposition with Te doping at concentrations of 2×1017–3×1018 cm−3 during the growth process. In the temperature range from 800 to 1000 °C, the Al diffusion coefficient has an activation energy of 3.0 eV and is approximately proportional to the Te concentration. These results contrast sharply with Si-induced mixing which, in an analogous experiment, yielded an activation energy of 4.1 eV for the Al diffusion coefficient with a high power law dependence on the Si concentration.This publication has 14 references indexed in Scilit:
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