Novel shadow mask molecular beam epitaxial regrowth technique for selective doping
- 14 June 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (24) , 3180-3182
- https://doi.org/10.1063/1.109122
Abstract
We present a novel molecular beam epitaxial regrowth technique which provides a simple and convenient way for the in situ lateral structuring of the doping profiles and growth rates on a μm scale. We achieve excellent selective contacts to the respective doping layers for device dimensions varying from several 100 μm down to several μm. Keldysh based n‐i‐p‐i modulator structures, fabricated with our new method, exhibit an on/off ratio of 6:1 for a voltage swing of 7 V without enhancement by additional Bragg mirrors.Keywords
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