Doping concentration dependence of radiance and optical modulation bandwidth in carbon‐doped Ga0.51In0.49P/GaAs light‐emitting diodes grown by gas source molecular beam epitaxy
- 20 January 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (3) , 353-355
- https://doi.org/10.1063/1.106654
Abstract
No abstract availableKeywords
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