Development of non-destructive bulk micro-defect analyzer for Si wafers
- 1 March 1993
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 128 (1-4) , 304-309
- https://doi.org/10.1016/0022-0248(93)90338-w
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Comparison of Defect Images and Density Between Synchrotron Section Topography and Infrared Light Scattering Microscopy in Heat‐Treated Czochralski Silicon CrystalsJournal of the Electrochemical Society, 1992
- Light scattering from defects in crystals: Scattering by dislocationsPhilosophical Magazine Part B, 1991
- Investigations of oxygen precipitates in Czochralski silicon wafers by using infrared tomographyJournal of Crystal Growth, 1990
- Characterization of Oxygen Precipitates in CZ-Silicon Crystals by Light-Scattering TomographyJapanese Journal of Applied Physics, 1990
- Development of a bulk microdefect analyzer for Si wafersJournal of Applied Physics, 1989
- Observation of micro-defects in as-grown and heat treated Si crystals by infrared laser scattering tomographyJournal of Crystal Growth, 1989
- Observation of Lattice Defects in GaAs and Heat-treated Si Crystals by Infrared Light Scattering TomographyJapanese Journal of Applied Physics, 1983
- Infrared Absorption in-Type SiliconPhysical Review B, 1957