The deep levels in InGaAlP epilayers grown by metalorganic chemical vapor deposition using tertiarybutylphosphine
- 2 December 1994
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 145 (1-4) , 153-157
- https://doi.org/10.1016/0022-0248(94)91043-x
Abstract
No abstract availableThis publication has 17 references indexed in Scilit:
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