Change of the critical thickness in the preferred orientation of TiN films

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Abstract
Recently it was observed through cross-sectional TEM that the preferred orientation of the TiN thin film was changed from (200) to (111) with thickness. In this study, the process of the change in the preferred orientation was studied near the critical thickness by x-ray diffraction, and the value of the critical thickness could be estimated. The change of the critical thickness was also investigated with the strain energy per unit volume. The strain energy could be changed by controlling the energy of the bombarding particle, i.e., by adjusting the rf power, the working pressure, and the substrate bias in sputtering. The critical thickness was decreased monotonically in all cases as the energy of the bombarding particle or the strain energy per unit volume was increased. These results surely show the dependence of the change of the preferred orientation on the strain energy in the TiN thin films.