Hydrostatic Pressure and Uniaxial Stress Dependence of the Silicon (222) X‐Ray Reflection Power
- 1 November 1983
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 120 (1) , 183-188
- https://doi.org/10.1002/pssb.2221200120
Abstract
The hydrostatic pressure dependence of the silicon (222) X‐ray reflection power is calculated by means of a molecular‐theoretic model of the bond charge. The experiment, published by Yoder‐Short is explained by the variation of the s‐like portion of a/s + sp3> ‐ like model valence orbital. Furthermore, the uniaxial stress dependence of the “forbidden” reflections are calculated. Such experiments indicate the p‐like amount of the model valence orbitals in a direct manner.Keywords
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