Application of Electron Spin Resonance as a Tool for Building In Reliability (BIR)

This publication has 60 references indexed in Scilit:

• Electron and hole trapping in doped oxides
  IEEE Transactions on Nuclear Science, 1995
• Electron spin resonance evidence for the structure of a switching oxide trap: Long term structural change at silicon dangling bond sites in SiO2
  Applied Physics Letters, 1995
• Paramagnetic defect centers in BESOI and SIMOX buried oxides
  IEEE Transactions on Nuclear Science, 1993
• Evidence for a deep electron trap and charge compensation in separation by implanted oxygen oxides
  IEEE Transactions on Nuclear Science, 1992
• Room temperature reactions involving silicon dangling bond centers and molecular hydrogen in amorphous SiO/sub 2/ thin films on silicon
  IEEE Transactions on Nuclear Science, 1992
• Electron spin resonance of separation by implanted oxygen oxides: Evidence for structural change and a deep electron trap
  Applied Physics Letters, 1992
• SIMOX with epitaxial silicon: point defects and positive charge
  IEEE Transactions on Nuclear Science, 1991
• Interface traps and P b centers in oxidized (100) silicon wafers
  Applied Physics Letters, 1986
• Spin-Dependent Recombination on Silicon Surface
  Physical Review B, 1972
• Theory of the nuclear hyperfine structure of paramagnetic resonance spectra in crystals
  Proceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1951