Test structure and methodology for experimental extraction of threshold voltage shifts due to quantum mechanical effects in MOS inversion layers

This publication has 7 references indexed in Scilit:

• Effects of quantization on the electrical characteristics of deep submicron p- and n-MOSFETs
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
• Determination of ultra-thin gate oxide thicknesses for CMOS structures using quantum effects
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
• A computationally efficient model for inversion layer quantization effects in deep submicron N-channel MOSFETs
  IEEE Transactions on Electron Devices, 1996
• A simple model for quantisation effects in heavily-doped silicon MOSFETs at inversion conditions
  Solid-State Electronics, 1994
• Influence of high substrate doping levels on the threshold voltage and the mobility of deep-submicrometer MOSFETs
  IEEE Transactions on Electron Devices, 1992
• Quantum effects in Si n-MOS inversion layer at high substrate concentration
  Solid-State Electronics, 1990
• Electronic properties of two-dimensional systems
  Reviews of Modern Physics, 1982