Tunneling in ultrathin SiO2 layers on silicon: Comments on dispersion relations for electrons and holes
- 30 September 1979
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 31 (11) , 877-879
- https://doi.org/10.1016/0038-1098(79)90408-3
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Determination of minority carrier lifetime using MIS tunnel diodesApplied Physics Letters, 1974
- Tunneling in thin MOS structuresJournal of Vacuum Science and Technology, 1974
- Tunneling through thin MOS structures: Dependence on energy (E-κ)Applied Physics Letters, 1974
- Potential barriers to electron tunnelling in ultra-thin films of SiO2Solid State Communications, 1974
- The band edge of amorphous SiO2 by photoinjection and photoconductivity measurementsSolid State Communications, 1971
- Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodesJournal of Physics D: Applied Physics, 1971
- Studies of tunnel MOS diodes II. Thermal equilibrium considerationsJournal of Physics D: Applied Physics, 1971
- Photoemission of Holes from Silicon into Silicon DioxidePhysical Review B, 1966
- Photoemission of Electrons from Silicon into Silicon DioxidePhysical Review B, 1965
- Ultraviolet reflectance of Al2O3, SiO2 and BeOSolid State Communications, 1964