Oxidation of etched silicon in air at room temperature; Measurements with ultrasoft X-ray photoelectron spectroscopy (ESCA) and neutron activation analysis
- 31 December 1983
- journal article
- Published by Elsevier in Surface Science
- Vol. 128 (2-3) , 169-175
- https://doi.org/10.1016/s0039-6028(83)80024-7
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
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- Investigation of surfaces by means of the Zr Mζ radiationSurface Science, 1979
- Oxide Growth on Etched Silicon in Air at Room TemperatureJournal of the Electrochemical Society, 1975
- Oxidation of Si and GaAs in air at room temperatureSurface Science, 1972
- Determination of the etch rate of silicon in buffered HF using a 31Si tracer methodThe International Journal of Applied Radiation and Isotopes, 1969
- Observation of Etching of n-Type Silicon in Aqueous HF SolutionsJournal of the Electrochemical Society, 1967
- Optical Measurement of Film Growth on Silicon and Germanium Surfaces in Room AirJournal of the Electrochemical Society, 1957