Thickness dependence of staebler-wronski effect in a-Si:H
- 1 December 1983
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 59-60, 421-424
- https://doi.org/10.1016/0022-3093(83)90610-5
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Observation of photoinduced changes in the bulk density of gap states in hydrogenated amorphous siliconApplied Physics Letters, 1982
- Light-induced dangling bonds in hydrogenated amorphous siliconApplied Physics Letters, 1981
- Light-induced effects in Schottky diodes on hydrogenated amorphous siliconApplied Physics Letters, 1980
- Optically induced conductivity changes in discharge-produced hydrogenated amorphous siliconJournal of Applied Physics, 1980
- Thickness dependent conductivity of n-type hydrogenated amorphous siliconJournal of Non-Crystalline Solids, 1980
- Influence of interface charges on transport measurements in amorphous silicon filmsJournal de Physique, 1978