Impact of Scaling Down on Low Frequency Noise in Silicon MOS Transistors
- 16 August 1992
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 132 (2) , 501-507
- https://doi.org/10.1002/pssa.2211320226
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/ƒ) noiseAdvances in Physics, 1989
- A thermal activation model for 1/ƒy noise in Si-MOSFETsSolid-State Electronics, 1988
- Calculation of Surface Charge Noise at the Si-SiO2 InterfacePhysica Status Solidi (a), 1987
- Scaling Limits of Silicon VLSI TechnologySpringer Proceedings in Physics, 1986
- Ultra-large scale integrationIEEE Transactions on Electron Devices, 1984
- Low-frequency fluctuations in solids:noiseReviews of Modern Physics, 1981
- Flicker Noise in Electronic DevicesPublished by Elsevier ,1979
- Physical limits in digital electronicsProceedings of the IEEE, 1975
- Low frequency noise in MOS transistors—I TheorySolid-State Electronics, 1968
- Noise in Semiconductors: Spectrum of a Two-Parameter Random SignalJournal of Applied Physics, 1954