Design and performance analysis of InP-based high-speed and high-sensitivity optoelectronic integrated receivers
- 1 January 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 41 (2) , 162-172
- https://doi.org/10.1109/16.277384
Abstract
No abstract availableThis publication has 24 references indexed in Scilit:
- Realization and performance of quarter micron feature size InGaAs/InP MSM photodetectorPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Speed and sensitivity limitations of optoelectronic receivers based on MSM photodiode and millimeter-wave HBTs on InP substrateIEEE Photonics Technology Letters, 1992
- W-band low-noise InAlAs/InGaAs lattice-matched HEMTsIEEE Electron Device Letters, 1990
- Analysis of a GaAs metal-semiconductor-metal (MSM) photodetector with 0.1- mu m finger spacingIEEE Electron Device Letters, 1989
- Very high speed GaInAs metal-semiconductor-metal photodiode incorporating an AlInAs/GaInAs graded superlatticeApplied Physics Letters, 1989
- Hot-electron InGaAs/InP heterostructure bipolar transistors with f/sub T/ of 110 GHzIEEE Electron Device Letters, 1989
- Microwave performance of AlInAs-GaInAs HEMTs with 0.2- and 0.1- mu m gate lengthIEEE Electron Device Letters, 1988
- Fabrication of monolithic twin-GaInAs pin photodiode for balanced dual-detector optical coherent receiversElectronics Letters, 1988
- Multigigabit-per-second avalanche photodiode lightwave receiversJournal of Lightwave Technology, 1987
- Low dark current GaAs metal-semiconductor-metal (MSM) photodiodes using WSixcontactsIEEE Journal of Quantum Electronics, 1986