Observation of large peak-to-valley current ratios and large peak current densities in AlSb/InAs/AlSb double-barrier tunnel structures
- 15 November 1989
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 66 (10) , 5106-5108
- https://doi.org/10.1063/1.343742
Abstract
We report improved peak-to-valley current ratios and peak current densities in InAs/AlSb double-barrier, negative differential resistance tunnel structures. Our peak-to-valley current ratios are 2.9 at room temperature and 10 at liquid-nitrogen temperatures. Furthermore, we have observed peak current densities of 1.7×105 A/cm2. These figures of merit are substantially better than previously reported values. The improvements are obtained by adding spacer layers near the barriers, thinner well regions, and thinner barriers.This publication has 13 references indexed in Scilit:
- Resonant tunneling in AlSb/InAs/AlSb double-barrier heterostructuresApplied Physics Letters, 1988
- III-V/II-VI double-barrier resonant tunneling structuresApplied Physics Letters, 1988
- Analysis of second level resonant tunneling diodes and transistorsJournal of Applied Physics, 1988
- Determination of the natural valence-band offset in the InxGa1−xAs systemApplied Physics Letters, 1987
- A Pseudomorphic In0.53Ga0.47As/AlAs Resonant Tunneling Barrier with a Peak-to-Valley Current Ratio of 14 at Room TemperatureJapanese Journal of Applied Physics, 1987
- AlGaAs/GaAs double barrier diodes with high peak-to-valley current ratioApplied Physics Letters, 1987
- MBE growth of InGaAs-InGaAlAs heterostructures for applications to high-speed devicesJournal of Crystal Growth, 1987
- Inverted base-collector tunnel transistorsApplied Physics Letters, 1985
- Resonant tunneling in GaAs/AlAs heterostructures grown by metalorganic chemical vapor depositionApplied Physics Letters, 1985
- Tunneling in a finite superlatticeApplied Physics Letters, 1973