Thermal Oxidation of Silicon
- 1 September 1962
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 33 (9) , 2849-2850
- https://doi.org/10.1063/1.1702564
Abstract
The results of a laboratory investigation of silicon—silicon dioxide film produced by high-temperature thermal oxidation of silicon in water vapor shows that (1) the oxidation rate in steam is dependent on the doping impurity concentration of the crystal, and (2) the oxidation in steam at 970°C for various lengths of time of phosphorus-diffused wafers with surface concentration of 2×1021 cm−3 results in an impurity pile-up region near the silicon surface. On the other hand, boron-diffused wafers with surface concentration in the order of 5×1018 cm−3 deplete their impurity concentration near the silicon surface.This publication has 5 references indexed in Scilit:
- Resistivity of Bulk Silicon and of Diffused Layers in SiliconBell System Technical Journal, 1962
- Electroluminescence in Zinc Sulfide As Due to Minority Carrier InjectionJournal of the Electrochemical Society, 1961
- Impurity Redistribution and Junction Formation in Silicon by Thermal OxidationBell System Technical Journal, 1960
- Evaluation of the Surface Concentration of Diffused Layers in SiliconBell System Technical Journal, 1958
- Surface Protection and Selective Masking during Diffusion in SiliconJournal of the Electrochemical Society, 1957