Model for the recombination velocity of silicon interstitials at nonoxidizing interfaces
- 15 December 1998
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 84 (12) , 6650-6658
- https://doi.org/10.1063/1.369040
Abstract
No abstract availableThis publication has 21 references indexed in Scilit:
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