The effects of radiation-induced defects on H+ transport in SiO2
- 30 September 1999
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 48 (1-4) , 215-218
- https://doi.org/10.1016/s0167-9317(99)00373-1
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- H/sup +/ motion in SiO/sub 2/: incompatible results from hydrogen-annealing and radiation modelsIEEE Transactions on Nuclear Science, 1998
- Electron and hole trapping in the buried oxide of Unibond wafersIEEE Transactions on Nuclear Science, 1997
- Protonic nonvolatile field effect transistor memories in Si/SiO/sub 2//Si structuresIEEE Transactions on Nuclear Science, 1997
- Non-volatile memory device based on mobile protons in SiO2 thin filmsNature, 1997
- Passivation and depassivation of silicon dangling bonds at the Si/SiO2 interface by atomic hydrogenApplied Physics Letters, 1993
- Time dependence of radiation-induced interface trap formation in metal-oxide-semiconductor devices as a function of oxide thickness and applied fieldJournal of Applied Physics, 1991
- Post-irradiation behavior of the interface state density and the trapped positive chargeIEEE Transactions on Nuclear Science, 1990
- Interface trap formation via the two-stage H/sup +/ processIEEE Transactions on Nuclear Science, 1989
- Trap creation in silicon dioxide produced by hot electronsJournal of Applied Physics, 1989
- A Framework for Understanding Radiation-Induced Interface States in SiO2 MOS StructuresIEEE Transactions on Nuclear Science, 1980