Measurement of lateral dopant diffusion in thin silicide layers
- 1 January 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 39 (10) , 2333-2340
- https://doi.org/10.1109/16.158805
Abstract
No abstract availableThis publication has 18 references indexed in Scilit:
- Characterization of lateral dopant diffusion in silicidesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Technology limitations for N/sup +//P/sup +/ polycide gate CMOS due to lateral dopant diffusion in silicide/polysilicon layersIEEE Electron Device Letters, 1991
- Comparison of transformation to low-resistivity phase and agglomeration of TiSi/sub 2/ and CoSi/sub 2/IEEE Transactions on Electron Devices, 1991
- Diffusion coefficient of boron in tungsten silicideApplied Physics Letters, 1990
- Titanium disilicide formation on heavily doped silicon substratesJournal of Applied Physics, 1987
- Silicided shallow junction formation by ion implantation of impurity ions into silicide layers and subsequent drive-inJournal of Applied Physics, 1987
- Boron, phosphorus, and arsenic diffusion in TiSi2Journal of Applied Physics, 1986
- A symmetric submicron CMOS technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1986
- Metastable phase formation in titanium-silicon thin filmsJournal of Applied Physics, 1985
- Properties of low-pressure CVD tungsten silicide for MOS VLSI interconnectionsIEEE Transactions on Electron Devices, 1983