Suppression of Boron Penetration in P+-Poly-Si Gate Metal-Oxide-Semiconductor Transistor Using Nitrogen Implantation
- 1 March 1997
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 36 (3S) , 1364
- https://doi.org/10.1143/jjap.36.1364
Abstract
The mechanism and the optimization of nitrogen implantation for suppression the boron penetration in p+-poly-Si gate metal-oxide-semiconductor capacitor is reported. This nitrogen co-implantation process exhibits a good suppression of boron penetration and a better electrical characteristic than that of control sample. It was found that nitrogen combines with the boron to form a B-N complex, retarding the penetration of boron itself, was identified by XPS measurements. The optimum nitrogen dosage is also found in this study.Keywords
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