Observation of a new thermally induced photoluminescence emission in silicon-doped Al0.3Ga0.7As
- 30 September 1988
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 67 (10) , 923-926
- https://doi.org/10.1016/0038-1098(88)90457-7
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
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