Silicon atomic plane doping in MBE grown InAs/GaAs
- 31 May 1991
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 78 (6) , 493-497
- https://doi.org/10.1016/0038-1098(91)90363-z
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- MBE growth and quantum transport measurements of spike-doped InSb and InAsSemiconductor Science and Technology, 1990
- Post-growth diffusion of Si in delta -doped GaAs grown by MBESemiconductor Science and Technology, 1989
- Magneto-optical and transport studies of ultrahigh mobility films of InAs grown on GaAs by molecular beam epitaxySemiconductor Science and Technology, 1989
- Magnetotransport studies of δ-doping layers in MOCVD-grown InPSemiconductor Science and Technology, 1989
- Effect of substrate temperature on migration of Si in planar-doped GaAsApplied Physics Letters, 1988
- Saturation of the free-electron concentration in delta -doped GaAs: the DX centre in two dimensionsSemiconductor Science and Technology, 1988
- On the practical applications of MBE surface phase diagramsJournal of Crystal Growth, 1987
- Complex free-carrier profile synthesis by ’’atomic-plane’’ doping of MBE GaAsJournal of Applied Physics, 1980
- Electronic profile of n-InAs on semi-insulating GaAsJournal of Applied Physics, 1979
- Transport coefficients of InAs epilayersApplied Physics Letters, 1974