Tellurium and zinc doping in In0.32Ga0.68P layers grown by liquid-phase epitaxy

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Abstract
[[abstract]]In0.32Ga0.68P epitaxial layers doped with Te and Zn were grown on (100) GaAs0.61P0.39 epitaxial substrates by liquid-phase epitaxy using a supercooling method. The electrical properties of doped layers were determined by C-V measurements at 300 K. Room-temperature carrier concentrations ranging from 9 x 10(16) to 2 x 10(18) cm-3 for n-type and from 3 x 10(16) to 6 x 10(18) cm-3 for p-type dopants are obtained reproducibly. The full width at half maximum value of the 300 K photoluminescent spectrum increases with carrier concentration for Te- and Zn-doped layers. The relative intensity of 300-K photoluminescent peak presents the maximum values at 1 x 10(18) and 6 x 10(17) cm-3 for electron and hole concentrations, respectively. The 100-K photoluminescent spectra show three distinctive peaks and their relative intensities change with hole concentrations. Finally, the relationship between the acceptor ionization energy and hole concentration is described.[[fileno]]2030154010111[[department]]電機工程學