Hot-Electron Design Considerations for High-Density RAM Chips
- 1 August 1980
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 15 (4) , 694-704
- https://doi.org/10.1109/jssc.1980.1051457
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- WA-A8 A channel hot-electron degradation model for IGFET'sIEEE Transactions on Electron Devices, 1979
- Hot-electron emission in N-channel IGFET'sIEEE Transactions on Electron Devices, 1979
- Cross-coupled charge-transfer sense amplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1979
- IIIa-2 characterization of electronic gate current in IGFETS operating in the linear and saturation regionsIEEE Transactions on Electron Devices, 1977
- Effect of electron trapping on IGFET characteristicsJournal of Electronic Materials, 1977
- Hot-carrier instability in IGFET’sApplied Physics Letters, 1975
- Low-level avalanche multiplication in IGFETSPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1974
- Substrate current-a device and process monitorPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1974
- Source-drain breakdown in an insulated gate, field-effect transistorPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1973
- A New Instability in MOS Transistor Caused by Hot Electron and Hole Injection from Drain Avalanche Plasma into Gate OxideJapanese Journal of Applied Physics, 1970