Novel AlInAsSb/InGaAs double-barrier resonant tunneling diode with high peak-to-valley current ratio at room temperature
- 1 April 2000
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 21 (4) , 146-148
- https://doi.org/10.1109/55.830963
Abstract
We demonstrate a novel Al/sub 0.66/In/sub 0.34/As/sub 0.85/Sb/sub 0.15/-In/sub 0.53/Ga/sub 0.47/As double-barrier resonant tunneling diode grown by metalorganic vapor phase epitaxy. A high peak-to-valley current ratio of 46 and a peak current density of 22 kA/cm/sup 2/ were obtained at room temperature.Keywords
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