Epitaxial growth of (011) Al on (100) Si by vapor deposition
- 6 July 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (1) , 37-39
- https://doi.org/10.1063/1.107660
Abstract
The morphology, orientation relationship and interface structure of Al vapor deposited on (100) Si single-crystal substrates were investigated by x-ray diffraction and transmission electron microscopy. It was shown that vapor growth at room-temperature results in a random (111) texture whereas growth at 280 °C leads to films with high-quality (011) epitaxy and a high degree of grain boundary faceting. Due to alignment of close-packed directions in the plane of the interface there are two orientation variants with a morphology characterized by an oriented 90° 〈011〉 mazed bicrystal structure.Keywords
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