Normal-incidence electroabsorption in Ga1−xAlxSb/AlSb L-valley quantum wells for 3–5 μm optical modulation
- 15 August 1993
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 74 (4) , 2810-2812
- https://doi.org/10.1063/1.354630
Abstract
Theoretical investigations are presented of the electric‐field dependence of normal‐incidence interconduction subband absorption in Ga1−xAlxSb/AlSb L‐valley quantum wells. Under an applied electric field of 50 kV/cm, a blue shift of the absorption peak from 4.94 to 4.82 μm was found in a Ga0.7Al0.3Sb/AlSb structure with well width of 25 Å. The ability to absorb normally incident light and to achieve significant Stark shifts with bias makes the Ga1−xAlxSb/AlSb L‐valley system an attractive choice for the 3–5 μm vertical optical modulators.This publication has 22 references indexed in Scilit:
- Orientation dependence of intersubband absorption in AlAs/Ga1−xAlxAs X valley superlatticesJournal of Applied Physics, 1992
- Intersubband absorption and infrared photodetection at 3.5 and 4.2 μm in GaAs quantum wellsApplied Physics Letters, 1991
- Calculation of the intersubband absorption strength in ellipsoidal-valley quantum wellsPhysical Review B, 1990
- Transfer-matrix algorithm for the calculation of the band structure of semiconductor superlatticesPhysical Review B, 1988
- Spectroscopic determination of the band discontinuity in GaSb/AlSb multiple-quantum-well structuresPhysical Review B, 1988
- High-detectivity InAs 0.85 Sb 0.15 /InAs infra-red (1.8-4.8 μm) detectorsElectronics Letters, 1986
- Electric field dependence of optical absorption near the band gap of quantum-well structuresPhysical Review B, 1985
- Variational calculations on a quantum well in an electric fieldPhysical Review B, 1983
- Optical absorption in surface space-charge layers of anisotropic and tilted valley systemsSolid State Communications, 1977
- Properties of Semiconductor Surface Inversion Layers in the Electric Quantum LimitPhysical Review B, 1967