Inequivalent impurity and trap incorporation at normal and inverted interfaces of AlGaAs/GaAs quantum wells grown by molecular beam epitaxy

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Abstract
The influence of growth interruption time on the incorporation of shallow impurities and traps in molecular beam epitaxy grown GaAs/AlGaAs quantum wells is studied by means of steady-state and time-resolved photoluminescence. With increasing interruption time, the GaAs surface becomes appreciably smoother, and increasing incorporation of shallow impurities, but not incorporation of traps is observed. At the AlGaAs surface the concentration of traps strongly increases with growth interruption time, but the surface does not become smoother. Additionally, strong accumulation of shallow impurities at the AlGaAs surface (inverted interface) is directly visualized.

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