BaSrTiO/sub 3/ thin films for integrated high frequency capacitors
- 24 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 1, 103-106
- https://doi.org/10.1109/isaf.1996.602718
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- A gbit-scale dram stacked capacitor with ECR MOCVD SrTiO3 over RIE patterned RuO2/TiN storage nodesIntegrated Ferroelectrics, 1995
- MOCVD of BaSrTiO3 for ulsi dramsIntegrated Ferroelectrics, 1995
- Effects of O3 on Growth and Electrical Properties of Pb(Zr, Ti)O3 Thin Films by Photoenhanced Metalorganic Chemical Vapor DepositionJapanese Journal of Applied Physics, 1994
- Step Coverage and Electrical Properties of (Ba, Sr)TiO3 Films Prepared by Liquid Source Chemical Vapor Deposition Using TiO(DPM)2Japanese Journal of Applied Physics, 1994
- Structural and Electrical Characterization of SrTiO3 Thin Films Prepared by Metal Organic Chemical Vapor DepositionJapanese Journal of Applied Physics, 1993
- Effects of crystallization on structural and dielectric properties of thin amorphous films of (1−x)BaTiO3-xSrTiO3 (x=0–0.5, 1.0)Journal of Applied Physics, 1993
- Preparation of Pb(Zr, Ti)O3 Thin Films Using All Dipivaloylmethane Source Materials by Metalorganic Chemical Vapor DepositionJapanese Journal of Applied Physics, 1992